808nm Semiconductor Laser System adopts the gold standard laser with a wavelength of 808nm. Semiconductor laser emits near-infrared light waves, which can penetrate deep into the root of the hair follicle, heat the pigment therein and diffuse it throughout the entire follicle, which is capable of precisely destroying the hair follicle without causing damage to neighboring tissues, and permanently removes hair.
With advanced sapphire contact cooling system, the skin enjoys cool comfort during treatment. Large light spot and high frequency treatment speed is fast, applicable to all parts of the body and all skin colors.
808nm wavelength effective penetration depth can reach the target target tissue (hair papilla), appropriate pulse duration to ensure that the target tissue to produce sufficient thermal damage and the surrounding tissue is almost unaffected; appropriate amount of energy density to ensure that the appropriate time to provide sufficiently strong energy output is enough to damage the target tissue and normal tissue is almost unaffected; appropriate epidermal protection measures to ensure that the target tissue enough damage, and epidermal The appropriate epidermal protection measures to ensure sufficient damage to the target tissue, while the epidermis is almost unaffected, thus guaranteeing the safety of the treatment. At the same time to achieve the above design requirements at the same time semiconductor hair removal laser series of specially designed multi-pulse laser in the choice of lower energy density mode will be heated to 48 ℃ follicles and through the treatment of the handpiece sliding to maintain a period of time (10HZ state) hair follicles and the growth of the growth of stem cells that is to lose the growth of activity, so as to achieve the purpose of permanent hair removal.
The 808 Laser Hair Removal System enhances the accuracy and comprehensiveness of hair removal by accurately removing hair from armpits, legs, arms, lips and back.
Laser type | 808-810nm semiconductor laser |
Laser wavelength | 800nm-810nm |
Energy density | 10-100J/cm² |
Pulse width | 10-300ms |
Operating frequency | 1-10Hz |
Target bar power | 100W/bar X 5 strips |
Light spot area | 15mm×15mm |
Output method | Pulse mode |
Conduction media | Sapphire contact temperature:0~5℃ |
Display screens | 10.4″ HD capacitive colour screen |
Cooling methods | Air cooling + water cooling + 300WTEC semiconductor cooling system |
Output power of the whole machine | 800W |
Input voltage | 220V±10%或110V±10% |
Package size | 580x470x120mm (LxWxH) |
Weight | 70KG |